Characterization by Internal Photoemission Spectroscopy of Single-Crystal CVD Diamond Schottky Barrier Diodes
2010 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 39, no 8, 1203-1208 p.Article in journal (Refereed) Published
Internal photoemission spectroscopy measurements have been performed to study the electrical characteristics of Schottky diodes on boron-doped single-crystalline chemical vapor deposited (SC-CVD) diamond. These measurements were compared with current-voltage (I-V) and current-temperature (I-T) measurements. Schottky contact barrier heights and ideality factors have been measured on Schottky contacts formed on four samples with Au, Ni, and Al contact metallizations. I-V and I-T measurements were performed in the temperature range from 300 K to 500 K. The internal photoemission method, which is less influenced by local variations in the Schottky barrier height than the other two methods, yielded the highest values of Schottky barrier heights to p-type material: I broken vertical bar(B) = 1.78 eV to 2.10 eV, depending on the choice of contact metal and sample boron concentration.
Place, publisher, year, edition, pages
2010. Vol. 39, no 8, 1203-1208 p.
CVD diamond, Schottky barrier diodes, internal photoemission spectroscopy, Schottky barrier heights
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-135814DOI: 10.1007/s11664-010-1255-8ISI: 000279504900012OAI: oai:DiVA.org:uu-135814DiVA: diva2:375843