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Phase stability and electronic structure of Si2Sb2Te5 phase-change material
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2010 (English)In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, E-ISSN 1879-2553, Vol. 71, no 8, 1165-1167 p.Article in journal (Refereed) Published
Abstract [en]

On the basis of an ab initio computational study, the present work provide a full understanding on the atomic arrangements, phase stability as well as electronic structure of Si2Sb2Te5, a newly synthesized phase-change material. The results show that Si2Sb2Te5 tends to decompose into Si1Sb2Te4 or Si1Sb4Te7 or Sb2Te3, therefore, a nano-composite containing Si1Sb2Te4, Si1Sb4Te7 and Sb2Te3 may be self-generated from Si2Sb2Te5. Hence Si2Sb2Te5 based nano-composite is the real structure when Si2Sb2Te5 is used in electronic memory applications. The present results agree well with the recent experimental work.

Place, publisher, year, edition, pages
2010. Vol. 71, no 8, 1165-1167 p.
Keyword [en]
Nanostructure, Ab initio calculations, Crystal structure, Electronic structure
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-136515DOI: 10.1016/j.jpcs.2010.03.027ISI: 000280977000028OAI: oai:DiVA.org:uu-136515DiVA: diva2:377053
Available from: 2010-12-13 Created: 2010-12-13 Last updated: 2012-03-14Bibliographically approved

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Ahuja, Rajeev
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Materials Theory
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