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Localised modifications of anatase TiO2 thin films by a Focused Ion Beam
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Surface and Interface Science.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Surface and Interface Science.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 268, no 19, 3142-3146 p.Article in journal (Refereed) Published
Abstract [en]

A Focused Ion Beam (FIB) has been used to implant micrometer-sized areas of polycrystalline anatase TiO2 thin films with Ga+ ions using fluencies from 10(15) to 10(17) ions/cm(2). The evolution of the surface morphology was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, the chemical modifications of the surface were followed by X-ray photoelectron spectroscopy (XPS). The implanted areas show a noticeable change in surface morphology as compared to the as-deposited surface. The surface loses its grainy morphology to gradually become a smooth surface with a RMS roughness of less than 1 nm for the highest ion fluence used. The surface recession or depth of the irradiated area increases with ion fluence, but the rate with which the depth increases changes at around 5 x 10(16) ions/cm(2). Comparison with implantation of a pre-irradiated surface indicates that the initial surface morphology may have a large effect on the surface recession rate. Detailed analysis of the XPS spectra shows that the oxidation state of Ti and O apparently does not change, whereas the implanted gallium exists in an oxidation state related to Ga2O3.

Place, publisher, year, edition, pages
2010. Vol. 268, no 19, 3142-3146 p.
Keyword [en]
Ion implantation, Focused Ion Beam, Titanium dioxide, Galium oxide, Thin films
National Category
Physical Sciences Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:uu:diva-136492DOI: 10.1016/j.nimb.2010.05.074ISI: 000282301100066OAI: oai:DiVA.org:uu-136492DiVA: diva2:377325
Available from: 2010-12-14 Created: 2010-12-13 Last updated: 2016-04-18Bibliographically approved

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Kubart, TomasMartin, DavidJensen, J.

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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