Localised modifications of anatase TiO2 thin films by a Focused Ion Beam
2010 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 268, no 19, 3142-3146 p.Article in journal (Refereed) Published
A Focused Ion Beam (FIB) has been used to implant micrometer-sized areas of polycrystalline anatase TiO2 thin films with Ga+ ions using fluencies from 10(15) to 10(17) ions/cm(2). The evolution of the surface morphology was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, the chemical modifications of the surface were followed by X-ray photoelectron spectroscopy (XPS). The implanted areas show a noticeable change in surface morphology as compared to the as-deposited surface. The surface loses its grainy morphology to gradually become a smooth surface with a RMS roughness of less than 1 nm for the highest ion fluence used. The surface recession or depth of the irradiated area increases with ion fluence, but the rate with which the depth increases changes at around 5 x 10(16) ions/cm(2). Comparison with implantation of a pre-irradiated surface indicates that the initial surface morphology may have a large effect on the surface recession rate. Detailed analysis of the XPS spectra shows that the oxidation state of Ti and O apparently does not change, whereas the implanted gallium exists in an oxidation state related to Ga2O3.
Place, publisher, year, edition, pages
2010. Vol. 268, no 19, 3142-3146 p.
Ion implantation, Focused Ion Beam, Titanium dioxide, Galium oxide, Thin films
Physical Sciences Other Engineering and Technologies
IdentifiersURN: urn:nbn:se:uu:diva-136492DOI: 10.1016/j.nimb.2010.05.074ISI: 000282301100066OAI: oai:DiVA.org:uu-136492DiVA: diva2:377325