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High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, no 12, 3313-3319 p.Article in journal (Refereed) Published
Abstract [en]

Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide. In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200 degrees C, have resistivities in the low to mid 10(-4) Omega cm range with a transmittance better than 85% in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

Place, publisher, year, edition, pages
2010. Vol. 518, no 12, 3313-3319 p.
Keyword [en]
Transparent conducting oxide, Aluminum-doped zinc oxide, Filtered cathodic arc
National Category
Physical Sciences Engineering and Technology
URN: urn:nbn:se:uu:diva-136594DOI: 10.1016/j.tsf.2009.10.006ISI: 000276574700032OAI: oai:DiVA.org:uu-136594DiVA: diva2:377483
Available from: 2010-12-14 Created: 2010-12-13 Last updated: 2016-04-18Bibliographically approved

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Andersson, Joakim
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