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On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films
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2010 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 43, no 13, 132003- p.Article in journal (Refereed) Published
Abstract [en]

We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L-3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3 (ZnO) m homologous phase that degrades the electrical conductivity.

Place, publisher, year, edition, pages
2010. Vol. 43, no 13, 132003- p.
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-136796DOI: 10.1088/0022-3727/43/13/132003ISI: 000275750700003OAI: oai:DiVA.org:uu-136796DiVA: diva2:377497
Available from: 2010-12-14 Created: 2010-12-14 Last updated: 2010-12-14Bibliographically approved

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