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Damage recovery in ZnO by post-implantation annealing
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Ion Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Ion Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Ion Physics.
2010 (English)In: Nuclear Instruments and Methods in Physics Reseach B, ISSN 0168-583X, Vol. 268, no 11-12, 1842-1846 p.Article in journal (Refereed) Published
Abstract [en]

ZnO bulk samples were implanted with 200 key-Co ions at room temperature with two fluences, 1 x 10(16) and 8 x 10(16) cm(-2), and then annealed in air for 30 min at different temperatures up to 900 degrees C. After the implantation and each annealing step, the samples were analyzed by Rutherford backscattering spectrometry (RBS) in random and channeling directions to follow the evolution of the disorder profile. The RBS spectra reveal that disorder is created during implantation in proportion to the Co fluence. The thermal treatments induce a disorder recovery, which is however, not complete after annealing at 900 degrees C, where about 15% of the damage remains. To study the Co profile evolution during annealing, the samples were, in addition to RBS, characterized by secondary ion mass spectrometry (SIMS). The results show that Co diffusion starts at 800 degrees C, but also that a very different behavior is seen for Co concentrations below and above the solubility limit.

Place, publisher, year, edition, pages
2010. Vol. 268, no 11-12, 1842-1846 p.
Keyword [en]
ZnO, Ion implantation, RBS/channeling, SIMS, Radiation damage, Dopant diffusion
National Category
Subatomic Physics
Identifiers
URN: urn:nbn:se:uu:diva-136880DOI: 10.1016/j.nimb.2010.02.032ISI: 000278702300033OAI: oai:DiVA.org:uu-136880DiVA: diva2:377855
Available from: 2010-12-15 Created: 2010-12-14 Last updated: 2010-12-15Bibliographically approved

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