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Atomic layer deposition of high capacitance density Ta2O5-ZrO2 based dielectrics for metal-insulator-metal structures
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2010 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 87, no 2, 144-149 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated electrical properties of laminated atomic layer deposited films: ZrO2-Ta2O5, ZrO2-Nb2O5-Ta2O5, ZrO2-TaxNb1-xO5 and Ta2O5-ZrxNbyOz. Even though the capacitances of laminates were often higher compared to films of constituent materials with similar thickness, considerably higher charge storage factors, Q were achieved only when tetragonal ZrO2 was stabilized in ZrO2-Ta2O5 laminate and when the laminate thickness exceeded 50 rim. The decreased Q values in the case of most laminates were the result of increased leakage currents. In the case of thinner films only Ta2O5-ZrxNbyOz, stack possessed capacitance density and Q value higher than reference HfO2. Concerning the conduction mechanisms, in the case of thinner films, the Ta2O5 or TaxNb1-xO5 apparently controlled the leakage either by Richardson-Schottky emission or Poole-Frenkel effect. (C) 2009 Elsevier B.V. All rights reserved

Place, publisher, year, edition, pages
2010. Vol. 87, no 2, 144-149 p.
Keyword [en]
Nanolaminates, Atomic layer deposition, High-k dielectric
National Category
Engineering and Technology Natural Sciences
URN: urn:nbn:se:uu:diva-137943DOI: 10.1016/j.mee.2009.06.032ISI: 000273292700011OAI: oai:DiVA.org:uu-137943DiVA: diva2:378996
Available from: 2010-12-16 Created: 2010-12-16 Last updated: 2016-04-18Bibliographically approved

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Lu, Jun
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Microstructure Laboratory
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