CVD growth of cubic boron nitride; A theoretical/experimantel approach
2006 (English)In: Wide Band Gap Materials and New Developments, 2006, Research Signpost 37/661 (2), Fort P. O., rivandrum-695 023; Kerala, India , 2006, 41-67 p.Chapter in book (Refereed)
Cubic boron nitride (c-BN) exhibits an extraordinary combination of physical and chemical properties (hardness, High thermal conductivity, transparency) which is comparable or even superior to diamond in what concerns its ability to be doped as both n- and p-type semiconductor, and its higher chemical stability and lower reactivity at high temperatures. All these properties strongly suggest that c-BN is an extremely promising multifunctional material, which could be tailored for a very large range of advanced applications, such as micro- and opto-electronics, electron emission devices, radiation detection, biosensing, high temperature and/or radiation resistant devices.
Place, publisher, year, edition, pages
Research Signpost 37/661 (2), Fort P. O., rivandrum-695 023; Kerala, India , 2006. 41-67 p.
IdentifiersURN: urn:nbn:se:uu:diva-10457ISBN: 81-308-0092-6OAI: oai:DiVA.org:uu-10457DiVA: diva2:38225