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Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 25, 252108- p.Article in journal (Refereed) Published
Abstract [en]

This letter reports on a process scheme to obtain highly reproducible Ni1−xPtx silicide films of 3–6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

Place, publisher, year, edition, pages
2010. Vol. 97, no 25, 252108- p.
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Engineering and Technology
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URN: urn:nbn:se:uu:diva-139887DOI: 10.1063/1.3529459ISI: 000285764300041OAI: oai:DiVA.org:uu-139887DiVA: diva2:382375
Available from: 2010-12-30 Created: 2010-12-30 Last updated: 2017-12-11Bibliographically approved

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Zhang, ZhenZhang, Shi-Li

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