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Comparison of ZnS-Based Buffer Layers by Chemical Bath Deposition and Atomic Layer Deposition
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2010 (English)In: Thin-film compound semiconductor voltaics-2009 / [ed] Yamada A, Heske C, Contreras MA, Igalson M, Irvine SJC, 2010, Vol. 1165, 147-152 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this work we compare ZnS-based buffer layers prepared by atomic layer deposition, ALD, and chemical bath deposition, CBD. Both material and device properties are compared. CBD buffer layers are amorphous with a Zn(OH,S) composition while ALD buffer layers used in devices are crystalline with a Zn(O,OH,S) composition. Devices with ALD buffer layers are stable while for CBD, large lightsoaking effects are seen. Stable devices with CBD buffer layers are obtained by including an ALD-(Zn,Mg)O layer on top of the CBD layer.

Place, publisher, year, edition, pages
2010. Vol. 1165, 147-152 p.
Series
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 1165
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-140949ISI: 000284867000021OAI: oai:DiVA.org:uu-140949DiVA: diva2:384794
Conference
Symposium on Thin-Film Compound Semiconductor Photovoltaics San Francisco, CA, APR 13-17, 2009
Available from: 2011-01-10 Created: 2011-01-10 Last updated: 2016-04-18Bibliographically approved

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Platzer-Björkman, Charlotte

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