Comparison of ZnS-Based Buffer Layers by Chemical Bath Deposition and Atomic Layer Deposition
2010 (English)In: Thin-film compound semiconductor voltaics-2009 / [ed] Yamada A, Heske C, Contreras MA, Igalson M, Irvine SJC, 2010, Vol. 1165, 147-152 p.Conference paper (Refereed)
In this work we compare ZnS-based buffer layers prepared by atomic layer deposition, ALD, and chemical bath deposition, CBD. Both material and device properties are compared. CBD buffer layers are amorphous with a Zn(OH,S) composition while ALD buffer layers used in devices are crystalline with a Zn(O,OH,S) composition. Devices with ALD buffer layers are stable while for CBD, large lightsoaking effects are seen. Stable devices with CBD buffer layers are obtained by including an ALD-(Zn,Mg)O layer on top of the CBD layer.
Place, publisher, year, edition, pages
2010. Vol. 1165, 147-152 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 1165
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-140949ISI: 000284867000021OAI: oai:DiVA.org:uu-140949DiVA: diva2:384794
Symposium on Thin-Film Compound Semiconductor Photovoltaics San Francisco, CA, APR 13-17, 2009