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Metastable Defect Distributions and Spectral Photoresponse of CIGS Devices
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2010 (English)Conference paper (Refereed)
Abstract [en]

Metastable changes of photovoltaic parameters in baseline CIGS devices are investigated. In order to gain more insight into origin of these changes induced in particular by the reverse bias stress, quantum efficiency distribution together with current-voltage chracteristics are investigated with and without presence of blue illumination absorbed in CdS buffer. We show that photocurrent is affected by two barriers: one located in the absorber and related to the p+ layer enhanced by reverse bias treatment under elevated temperatures, and second related to negative charge accumulated most probably at CdS/i-ZnO interface. While the second barrier causes severe fill factor losses only under red illumination but is easily reduced by blue photons present in white light, the first one impedes current transport also under full spectrum. The results and simulations performed by using SCAPS software show the relation between both barriers: the more charge is accumulated in the p+ layer the more detrimental is the effect of the second barrier.

Place, publisher, year, edition, pages
2010. 3436-3441 p.
Keyword [en]
Cu(InGa)Se2, Interfaces, Spectral Response Light-Soaking
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-141330DOI: 10.4229/25thEUPVSEC2010-3BV.2.89OAI: oai:DiVA.org:uu-141330DiVA: diva2:385417
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Available from: 2011-01-11 Created: 2011-01-11 Last updated: 2015-01-07Bibliographically approved

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Edoff, Marika
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