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Metastabilities in the electrical characteristics of CIGS devices: Experimental results vs theoretical predictions
Faculty of Physics, Warsaw University of Technology.
Faculty of Physics, Warsaw University of Technology.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2007 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 15, 6142-6146 p.Article in journal (Refereed) Published
Abstract [en]

Recent theoretical calculations have traced an origin of light- and voltage bias-induced metastabilities in Cu(In,Ga)Se2-based solar cells to negative-U properties of the VSe–VCu complex. In this paper we compare experimental findings with theoretically predicted properties of these defects and calculated values of parameters characteristic for transitions between their different states. Profiles of net acceptor concentrations in the relaxed and metastable states obtained by capacitance profiling have been studied, as well as annealing kinetics of the persistent defect distributions by thermally stimulated capacitance and conductivity. Good qualitative and quantitative agreement are found between theory of VSe-related defects and experimental results. The consequences from the point of view of photovoltaic efficiency of the Cu(In,Ga)Se2-based solar cells are discussed.

Place, publisher, year, edition, pages
2007. Vol. 515, no 15, 6142-6146 p.
Keyword [en]
Defects, Capacitance, CIGS, Solar cells, Relaxation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-10909DOI: 10.1016/j.tsf.2006.12.038ISI: 000246831600085OAI: oai:DiVA.org:uu-10909DiVA: diva2:38677
Available from: 2007-05-03 Created: 2007-05-03 Last updated: 2017-12-11Bibliographically approved

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Edoff, Marika

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