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Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si
Institute for Science and Technology Research and Development, Chiang Mai University.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
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2007 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 253, no 11, 4836-4842 p.Article in journal (Refereed) Published
Abstract [en]

Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017 ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 °C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the poly-crystalline SiC.

Place, publisher, year, edition, pages
2007. Vol. 253, no 11, 4836-4842 p.
Keyword [en]
Ion beam synthesis (IBS), Silicon, Silicon carbide (SiC), Infrared spectroscopy (IR), Raman spectroscopy, Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA), X-ray diffraction (XRD) analysis, Transmission electron microscopy (TEM)
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-10998DOI: 10.1016/j.apsusc.2006.10.055ISI: 000245500200004OAI: oai:DiVA.org:uu-10998DiVA: diva2:38766
Available from: 2007-05-09 Created: 2007-05-09 Last updated: 2017-12-11Bibliographically approved

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Hallén, AndersLu, JunJensen, JensPossnert, Göran

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