Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si
2007 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 253, no 11, 4836-4842 p.Article in journal (Refereed) Published
Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 1017 ions/cm2. Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 °C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the poly-crystalline SiC.
Place, publisher, year, edition, pages
2007. Vol. 253, no 11, 4836-4842 p.
Ion beam synthesis (IBS), Silicon, Silicon carbide (SiC), Infrared spectroscopy (IR), Raman spectroscopy, Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA), X-ray diffraction (XRD) analysis, Transmission electron microscopy (TEM)
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-10998DOI: 10.1016/j.apsusc.2006.10.055ISI: 000245500200004OAI: oai:DiVA.org:uu-10998DiVA: diva2:38766