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Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
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2007 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 257, no 1-2, 195-198 p.Article in journal (Refereed) Published
Abstract [en]

In this experiment, carbon ions at 40 keV were implanted into (10 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 degrees C. Glancing incidence X-ray diffraction (GIXRD) was used to characterize the crystalline quality and estimate the grain size of nano-crystalline 3C-SiC. Activation energy for the growth of 3C-SiC was evaluated following the annealing behaviour of the GIXRD-characteristic 3C-SiC (111) peaks. It was found that the 3C-SiC was directly formed during ion implantation at this substrate temperature and the activation energy of the process was about 0.05 eV. Such a low energy was explained in terms of ion beam induced precipitate formation.

Place, publisher, year, edition, pages
2007. Vol. 257, no 1-2, 195-198 p.
Keyword [en]
Ion beam synthesis (IBS), Silicon, Silicon carbide (SiC), Glancing incidence X-ray diffraction (GIXRD), Activation energy
National Category
Subatomic Physics Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-11002DOI: 10.1016/j.nimb.2007.01.022ISI: 000246165500045OAI: oai:DiVA.org:uu-11002DiVA: diva2:38770
Available from: 2007-05-09 Created: 2007-05-09 Last updated: 2016-04-08Bibliographically approved

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Hallén, AndersJensen, JensPossnert, Göran

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Subatomic PhysicsEngineering and Technology

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