Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC
2007 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 257, no 1-2, 195-198 p.Article in journal (Refereed) Published
In this experiment, carbon ions at 40 keV were implanted into (10 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 degrees C. Glancing incidence X-ray diffraction (GIXRD) was used to characterize the crystalline quality and estimate the grain size of nano-crystalline 3C-SiC. Activation energy for the growth of 3C-SiC was evaluated following the annealing behaviour of the GIXRD-characteristic 3C-SiC (111) peaks. It was found that the 3C-SiC was directly formed during ion implantation at this substrate temperature and the activation energy of the process was about 0.05 eV. Such a low energy was explained in terms of ion beam induced precipitate formation.
Place, publisher, year, edition, pages
2007. Vol. 257, no 1-2, 195-198 p.
Ion beam synthesis (IBS), Silicon, Silicon carbide (SiC), Glancing incidence X-ray diffraction (GIXRD), Activation energy
Subatomic Physics Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-11002DOI: 10.1016/j.nimb.2007.01.022ISI: 000246165500045OAI: oai:DiVA.org:uu-11002DiVA: diva2:38770