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Modelling of Magnetron Sputtering of Tungsten Oxide with Reactive Gas Pulsing
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2007 (English)In: Plasma Processes and Polymers, ISSN 1612-8850, Vol. 4, S522-S526 p.Article in journal (Refereed) Published
Abstract [en]

Reactive sputtering is one of the most commonly employed processes for the deposition of thin films. However, the range of applications is limited by inherent instabilities, which necessitates the use of a complex feedback control of reactive gas (RG) partial pressure. Recently pulsing of the RG has been suggested as a possible alternative. In this report, the concept of periodically switching the RG flow between two different values is applied to the deposition of tungsten oxide. The trends in the measured time dependent RG pressure and discharge voltage are reproduced by a dynamical model developed for this process. Furthermore, the model predicts the compositional depth profile of the deposited film reasonably well, and in particular helps to understand the formation of the interfaces in the resulting multi-layer film.

Place, publisher, year, edition, pages
2007. Vol. 4, S522-S526 p.
Keyword [en]
dynamic modelling, gas pulsing, reactive sputtering, tungsten oxide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-142573DOI: 10.1002/ppap.200731301ISI: 000207735200100OAI: oai:DiVA.org:uu-142573DiVA: diva2:387726
Available from: 2011-01-14 Created: 2011-01-14 Last updated: 2016-04-11Bibliographically approved

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Kubart, TomasKappertz, OliverNyberg, TomasBerg, Sören

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