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Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
Institute of Solid State Electronics, Vienna University of Technology.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2007 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 47, no 4-5, 536-539 p.Article in journal (Refereed) Published
Abstract [en]

In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TiN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 °C or 950 °C show thermodynamic instability and related undesirable high leakage currents.

Place, publisher, year, edition, pages
2007. Vol. 47, no 4-5, 536-539 p.
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-11288DOI: 10.1016/j.microrel.2007.01.002ISI: 000248663300014OAI: oai:DiVA.org:uu-11288DiVA: diva2:39056
Available from: 2007-08-24 Created: 2007-08-24 Last updated: 2011-04-13Bibliographically approved

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Sjöblom, GustafOlsson, Jörgen
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