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Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric
Institute for Solid State Electronics, Vienna University of Technology.
Advanced Microelectronic Center, Aachen.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Advanced Microelectronic Center, Aachen.
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2007 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 84, no 5-8, 1635-1638 p.Article in journal (Refereed) Published
Abstract [en]

We evaluate various metal gate/high-k/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.

Place, publisher, year, edition, pages
2007. Vol. 84, no 5-8, 1635-1638 p.
Keyword [en]
metal gate, high-kappa, ZrO2, HfO2, MOCVD, processing
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-11289DOI: 10.1016/j.mee.2007.01.176ISI: 000247182500223OAI: oai:DiVA.org:uu-11289DiVA: diva2:39057
Available from: 2007-08-24 Created: 2007-08-24 Last updated: 2017-12-11

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Sjöblom, GustafOlsson, Jörgen

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