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LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Komponentgruppen)
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2011 (English)In: Proc. of EUROSOI 2011 workshop: VII workshop of the thematic network on silicon on insulator technology, devices and circuits, Jan 17-19, Granada, Spain, 2011, 153-154 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon based RF and power devices need a substrate that conducts heat better than conventional SOI-substrates. Here, the silicon dioxide insulator and the silicon substrate as in a SOI-wafer, are replaced by silicon carbide (SiC) which has higher thermal conductivity and is semi-insulating. Successful LDMOS-transistors were processed on the 150 mm Silicon-on-polycrystalline-Silicon carbide (Si-on-poly-SiC) substrates with improved or equal electrical performance compared to a RF-optimized SOI substrate.

Place, publisher, year, edition, pages
2011. 153-154 p.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-143769OAI: oai:DiVA.org:uu-143769DiVA: diva2:391398
Conference
EUROSOI 2011
Available from: 2011-01-25 Created: 2011-01-25 Last updated: 2016-04-20Bibliographically approved

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Lotfi, SaraVallin, ÖrjanLi, Ling-GuangVestling, LarsNorström, HansOlsson, Jörgen

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