LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates
2011 (English)In: Proc. of EUROSOI 2011 workshop: VII workshop of the thematic network on silicon on insulator technology, devices and circuits, Jan 17-19, Granada, Spain, 2011, 153-154 p.Conference paper (Refereed)
Silicon based RF and power devices need a substrate that conducts heat better than conventional SOI-substrates. Here, the silicon dioxide insulator and the silicon substrate as in a SOI-wafer, are replaced by silicon carbide (SiC) which has higher thermal conductivity and is semi-insulating. Successful LDMOS-transistors were processed on the 150 mm Silicon-on-polycrystalline-Silicon carbide (Si-on-poly-SiC) substrates with improved or equal electrical performance compared to a RF-optimized SOI substrate.
Place, publisher, year, edition, pages
2011. 153-154 p.
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-143769OAI: oai:DiVA.org:uu-143769DiVA: diva2:391398