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Structure of the Ge-Sb-Te phase-change materials studied by theory and experiment
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. (Condensed Matter Theory Group)
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. (Condensed Matter Theory Group)
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2007 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 143, no 4-5, 240-244 p.Article in journal (Refereed) Published
Abstract [en]

We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using theoretical and experimental means. Based on ab initio calculations, we propose the stacking sequence in the [111] direction of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 phases to be Te-Ge-Te-Sb-Te-v-Te-Sb-, Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Sb-Te-v-Te-Sb-, and Te-Ge-Te-Ge-Te-Sb-Te-v-Te-Sb-Te-Ge-, respectively, where v is an ordered vacancy layer. This structural model agrees with the X-ray diffraction data of sputter-deposited Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 thin films.

Place, publisher, year, edition, pages
2007. Vol. 143, no 4-5, 240-244 p.
Keyword [en]
Ge-Sb-Te thin films, crystal structure and symmetry, electronic band structure
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-143770DOI: 10.1016/j.ssc.2007.05.018ISI: 000248430700011OAI: oai:DiVA.org:uu-143770DiVA: diva2:391432
Available from: 2011-01-25 Created: 2011-01-25 Last updated: 2017-12-11Bibliographically approved

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Ahuja, Rajeev

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