uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
Show others and affiliations
2007 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 154, no 10, G207-G214 p.Article in journal (Refereed) Published
Abstract [en]

Amorphous or cubic Gd2O3 thin films were grown from tris ( 2,3-dimethyl-2-butoxy)gadolinium( III) , Gd [OC(CH3)(2)CH(CH3)(2))(3)], and H2O precursors at 350 degrees C. As-deposited Gd2O3 films grown on etched (H-terminated) Si(100) exhibited better leakage current-voltage characteristics as well as lower flatband voltage shift than films grown on SiO2/ Si substrates. Interface trap densities were lower in Al/Gd2O3/ hydrofluoric acid (HF)-etched Si samples annealed at rather high temperatures.

Place, publisher, year, edition, pages
2007. Vol. 154, no 10, G207-G214 p.
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-144023DOI: 10.1149/1.2761845ISI: 000248984700056OAI: oai:DiVA.org:uu-144023DiVA: diva2:392156
Available from: 2011-01-26 Created: 2011-01-26 Last updated: 2016-04-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
Applied Materials Sciences
In the same journal
Journal of the Electrochemical Society
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 224 hits
ReferencesLink to record
Permanent link

Direct link