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Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
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2007 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 154, no 10, G207-G214 p.Article in journal (Refereed) Published
Abstract [en]

Amorphous or cubic Gd2O3 thin films were grown from tris ( 2,3-dimethyl-2-butoxy)gadolinium( III) , Gd [OC(CH3)(2)CH(CH3)(2))(3)], and H2O precursors at 350 degrees C. As-deposited Gd2O3 films grown on etched (H-terminated) Si(100) exhibited better leakage current-voltage characteristics as well as lower flatband voltage shift than films grown on SiO2/ Si substrates. Interface trap densities were lower in Al/Gd2O3/ hydrofluoric acid (HF)-etched Si samples annealed at rather high temperatures.

Place, publisher, year, edition, pages
2007. Vol. 154, no 10, G207-G214 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:uu:diva-144023DOI: 10.1149/1.2761845ISI: 000248984700056OAI: oai:DiVA.org:uu-144023DiVA: diva2:392156
Available from: 2011-01-26 Created: 2011-01-26 Last updated: 2017-12-11Bibliographically approved

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