Controlled growth of nanocrystalline silicon on permalloy micro-patterns
2007 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 88, no 4, 797-800 p.Article in journal (Refereed) Published
Lithographically prepared micrometer-sized permalloy ellipses were used to control the growth of nanocrystalline Si in otherwise amorphous Si film prepared by plasma enhanced chemical vapor deposition. Atomic force microscopy and micro-Raman spectroscopy were employed to study the surface structures before and after the deposition of the Si film. The possible applications of the controlled growth of nanocrystalline Si micro-patterns are discussed as well as the mechanisms leading to the growth of these patterns.
Place, publisher, year, edition, pages
2007. Vol. 88, no 4, 797-800 p.
Physical Sciences Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-144560DOI: 10.1007/s00339-007-4087-5ISI: 000248064100037OAI: oai:DiVA.org:uu-144560DiVA: diva2:393659