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Controlled growth of nanocrystalline silicon on permalloy micro-patterns
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2007 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 88, no 4, 797-800 p.Article in journal (Refereed) Published
Abstract [en]

Lithographically prepared micrometer-sized permalloy ellipses were used to control the growth of nanocrystalline Si in otherwise amorphous Si film prepared by plasma enhanced chemical vapor deposition. Atomic force microscopy and micro-Raman spectroscopy were employed to study the surface structures before and after the deposition of the Si film. The possible applications of the controlled growth of nanocrystalline Si micro-patterns are discussed as well as the mechanisms leading to the growth of these patterns.

Place, publisher, year, edition, pages
2007. Vol. 88, no 4, 797-800 p.
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Physical Sciences Engineering and Technology
URN: urn:nbn:se:uu:diva-144560DOI: 10.1007/s00339-007-4087-5ISI: 000248064100037OAI: oai:DiVA.org:uu-144560DiVA: diva2:393659
Available from: 2011-01-31 Created: 2011-01-31 Last updated: 2016-04-11Bibliographically approved

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Gunnarsson, Klas
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Solid State Physics
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