uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
2007 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, no 12, 124105- p.Article in journal (Refereed) Published
Abstract [en]

Hafnium oxide films with a measured relative dielectric constant of 15.4 were deposited at room temperature on Si and 4H-SiC substrates, as well as on 4H-SiC p-i-n diodes. An 8 nm thick SiO2 interfacial layer on SiC increased the breakdown field of the HfO2/SiO2 stack by 6%, while a 13 nm thick SiO2 layer reduced it by 35%. The evidence of different current conduction mechanisms in SiO2 is shown to be related to the oxide thickness. For the diodes, the breakdown voltage was extended by at least 20%, compared to nonpassivated devices. Annealing at 400 degrees C in a forming gas changed the crystallinity and increased the relative dielectric constant of the HfO2 layers. There is an indication of reaction between HfO2 and SiO2 in the stacked films after annealing.

Place, publisher, year, edition, pages
2007. Vol. 101, no 12, 124105- p.
National Category
Physical Sciences Engineering and Technology
URN: urn:nbn:se:uu:diva-144542DOI: 10.1063/1.2734956ISI: 000247625700109OAI: oai:DiVA.org:uu-144542DiVA: diva2:393804
Available from: 2011-02-01 Created: 2011-01-31 Last updated: 2011-02-01Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
Department of Materials Chemistry
In the same journal
Journal of Applied Physics
Physical SciencesEngineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 105 hits
ReferencesLink to record
Permanent link

Direct link