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A novel self-aligned process for platinum silicide nanowires
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2006 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 83, no 11-12, 2107-2111 p.Article in journal (Refereed) Published
Abstract [en]

Directly accessible, ultralong, uniform platinum silicide nanowires in PtSi and Pt2Si are mass-fabricated by combining a sidewall transfer lithography (STL) technology and a self-aligned silicide process. The STL technology is based on standard Si technology. The self-aligned platinum silicide (PtSix) process consists of two sequential steps in a single run: a silicidation step in N-2 to ensure a controllable silicide formation followed by an oxidation step in O-2 to form a reliable protective SiOx layer on top of the grown PtSix. The achieved nanowires are characterised by a low resistivity: 26 +/- 3 and 34 +/- 2 mu Omega cm for the Pt2Si- and PtSi-dominated nanowires.

Place, publisher, year, edition, pages
2006. Vol. 83, no 11-12, 2107-2111 p.
Keyword [en]
sidewall transfer lithography, self-aligned process, nanowire, platinum silicide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-146540DOI: 10.1016/j.mee.2006.09.032ISI: 000243315700013OAI: oai:DiVA.org:uu-146540DiVA: diva2:398523
Available from: 2011-02-18 Created: 2011-02-17 Last updated: 2017-12-11Bibliographically approved

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