A novel self-aligned process for platinum silicide nanowires
2006 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 83, no 11-12, 2107-2111 p.Article in journal (Refereed) Published
Directly accessible, ultralong, uniform platinum silicide nanowires in PtSi and Pt2Si are mass-fabricated by combining a sidewall transfer lithography (STL) technology and a self-aligned silicide process. The STL technology is based on standard Si technology. The self-aligned platinum silicide (PtSix) process consists of two sequential steps in a single run: a silicidation step in N-2 to ensure a controllable silicide formation followed by an oxidation step in O-2 to form a reliable protective SiOx layer on top of the grown PtSix. The achieved nanowires are characterised by a low resistivity: 26 +/- 3 and 34 +/- 2 mu Omega cm for the Pt2Si- and PtSi-dominated nanowires.
Place, publisher, year, edition, pages
2006. Vol. 83, no 11-12, 2107-2111 p.
sidewall transfer lithography, self-aligned process, nanowire, platinum silicide
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-146540DOI: 10.1016/j.mee.2006.09.032ISI: 000243315700013OAI: oai:DiVA.org:uu-146540DiVA: diva2:398523