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Formation of a buried collector layer in RF-bipolar devices by ion implantation
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2006 (English)In: Microelectronics Journal, ISSN 0026-2692, Vol. 37, no 11, 1366-1371 p.Article in journal (Refereed) Published
Abstract [en]

High-dose implantation of arsenic (As) buried collector layer formation for bipolar/BiCMOS processes has been studied. Wafers with and without screen oxide were subjected to high-dose implants with different energies. Some wafers were given a low-temperature anneal before XTEM and SIMS analyses. Defects observed after As implants of 6E15 cm(-2) through screen oxide after low-temperature anneal were annihilated at the subsequent high-temperature steps, but the direct implant of As into the silicon is preferred since fewer defects are generated and there is no knock-on of oxygen into the material. Fabricated devices showed excellent electrical performance. However, the upper limit (dose and/or energy) at which perfect recrystallization does no longer occur has not been defined and the process limit is consequently not established.

Place, publisher, year, edition, pages
2006. Vol. 37, no 11, 1366-1371 p.
Keyword [en]
bipolar, BiCMOS, collector, implant, XTEM, SIMS
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-147034DOI: 10.1016/j.mejo.2006.06.009ISI: 000242785900035OAI: oai:DiVA.org:uu-147034DiVA: diva2:399774
Available from: 2011-02-23 Created: 2011-02-23 Last updated: 2011-02-23Bibliographically approved

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