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Formation of a buried collector layer in RF-bipolar devices by ion implantation
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2006 (English)In: Microelectronics Journal, ISSN 0026-2692, Vol. 37, no 11, p. 1366-1371Article in journal (Refereed) Published
Abstract [en]

High-dose implantation of arsenic (As) buried collector layer formation for bipolar/BiCMOS processes has been studied. Wafers with and without screen oxide were subjected to high-dose implants with different energies. Some wafers were given a low-temperature anneal before XTEM and SIMS analyses. Defects observed after As implants of 6E15 cm(-2) through screen oxide after low-temperature anneal were annihilated at the subsequent high-temperature steps, but the direct implant of As into the silicon is preferred since fewer defects are generated and there is no knock-on of oxygen into the material. Fabricated devices showed excellent electrical performance. However, the upper limit (dose and/or energy) at which perfect recrystallization does no longer occur has not been defined and the process limit is consequently not established.

Place, publisher, year, edition, pages
2006. Vol. 37, no 11, p. 1366-1371
Keywords [en]
bipolar, BiCMOS, collector, implant, XTEM, SIMS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-147034DOI: 10.1016/j.mejo.2006.06.009ISI: 000242785900035OAI: oai:DiVA.org:uu-147034DiVA, id: diva2:399774
Available from: 2011-02-23 Created: 2011-02-23 Last updated: 2011-02-23Bibliographically approved

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