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Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays
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2010 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 57, no 6, 3199-3205 p.Article in journal (Refereed) Published
Abstract [en]

We studied heavy-ion effects on floating gate memories, focusing on the generation of tails in the threshold voltage distributions after irradiation. Using both experiments and simulations based on the Geant4 toolkit, we provide new insight, distinguishing two types of events, large events and small events, which are responsible for the secondary peak and the intermediate region in the post-rad threshold distribution, respectively. Both are well correlated with the energy deposited in the FG. Implications for error rate predictions are discussed.

Place, publisher, year, edition, pages
2010. Vol. 57, no 6, 3199-3205 p.
Keyword [en]
Flash memories, floating gate (FG) memories, single event effects
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-147093DOI: 10.1109/TNS.2010.2084592ISI: 000285355200028OAI: oai:DiVA.org:uu-147093DiVA: diva2:399979
Available from: 2011-02-24 Created: 2011-02-24 Last updated: 2011-02-24Bibliographically approved

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