Spin-mixing conductances: The influence of disorder
2008 (English)In: Physica status solidi A, Applications and materials science, ISSN 1862-6300, Vol. 205, no 8, 1805-1808 p.Article in journal (Refereed) Published
Spin transfer torque exerted on a magnetic layer can be viewed as a linear response to the spin accumulation inside an adjacent non-magnetic layer, information about their response coefficient is provided by the complex spin-mixing conductance C-mix. Substitutional disorder is known to affect the spin-dependent charge conductances and often reduces strongly the magnetoresistance. Here, we examine its impact on C-mix of several selected realistic systems. Recently predicted oscillations of C-mix as a function of ferromagnetic layer thickness in Ni based junctions might be suppressed by interface interdiffusion, but presented ab initio calculations disprove this possibility. Halfmetallic character of the Heusler compound Co(2)Mnsi is destroyed by often encountered antisite disorder; however the impact of this disorder to the predicted C-mix is rather weak. Diluted magnetic semiconductor (Ga,Mn)As is an intrinsically disordered system the analysis of calculations shows that the variation of C-mix with substitutional Mn content can be understood in terms of the associated change of the number of carriers, whereas the variation with lattice defects is more complex.
Place, publisher, year, edition, pages
2008. Vol. 205, no 8, 1805-1808 p.
IdentifiersURN: urn:nbn:se:uu:diva-149500DOI: 10.1002/pssa.200723620ISI: 000258863700016OAI: oai:DiVA.org:uu-149500DiVA: diva2:405096
Conference Information: 3rd Seeheim Conference on Magnetism (SCM2007)
Frankfurt, GERMANY, AUG 26-30, 2007 2011-03-212011-03-202011-03-21Bibliographically approved