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Spin-mixing conductances: The influence of disorder
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Materials Science, Materials Theory.
2008 (English)In: Physica status solidi A, Applications and materials science, ISSN 1862-6300, Vol. 205, no 8, 1805-1808 p.Article in journal (Refereed) Published
Abstract [en]

Spin transfer torque exerted on a magnetic layer can be viewed as a linear response to the spin accumulation inside an adjacent non-magnetic layer, information about their response coefficient is provided by the complex spin-mixing conductance C-mix. Substitutional disorder is known to affect the spin-dependent charge conductances and often reduces strongly the magnetoresistance. Here, we examine its impact on C-mix of several selected realistic systems. Recently predicted oscillations of C-mix as a function of ferromagnetic layer thickness in Ni based junctions might be suppressed by interface interdiffusion, but presented ab initio calculations disprove this possibility. Halfmetallic character of the Heusler compound Co(2)Mnsi is destroyed by often encountered antisite disorder; however the impact of this disorder to the predicted C-mix is rather weak. Diluted magnetic semiconductor (Ga,Mn)As is an intrinsically disordered system the analysis of calculations shows that the variation of C-mix with substitutional Mn content can be understood in terms of the associated change of the number of carriers, whereas the variation with lattice defects is more complex.

Place, publisher, year, edition, pages
2008. Vol. 205, no 8, 1805-1808 p.
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-149500DOI: 10.1002/pssa.200723620ISI: 000258863700016OAI: oai:DiVA.org:uu-149500DiVA: diva2:405096
Conference Information: 3rd Seeheim Conference on Magnetism (SCM2007) Frankfurt, GERMANY, AUG 26-30, 2007 Available from: 2011-03-21 Created: 2011-03-20 Last updated: 2011-03-21Bibliographically approved

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