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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films
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2008 (English)In: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 354, no 2-9, 404-408 p.Article in journal (Refereed) Published
Abstract [en]

Routes to atomic layer-deposited TiO2 films With decreased leakage have been studied by using electrical characterization techniques. The combination of post-deposition annealing parameters, time and temperature, which provides measurable aluminum-titanium oxide-silicon structures - i.e., having capacitance-voltage curves which show accumulation behavior - are 625 degrees C, 10 min for p-type substrates, and 550 degrees C, 10 min for n-type substrates. The best annealing conditions for p-type substrates are 625 degrees C with the length extended to 30 min, which produces an interfacial state density of about 5-6 x 10(11) cm(-2) eV(-1), and disordered-induced gap state density below our experimental limits. We have also proved that a post-deposition annealing must be applied to TiO2/HfO2 and HfO2/TiO2/HfO2 stacked structures to obtain adequate measurability conditions.

Place, publisher, year, edition, pages
2008. Vol. 354, no 2-9, 404-408 p.
Keyword [en]
band structure, dielectric properties, relaxation, electric modulus, thermally stimulated and depolarization current, heavy metal oxides, STEM/TEM, TEM/STEM, defects
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-149929DOI: 10.1016/j.jnoncrysol.2007.07.051ISI: 000252860800057OAI: oai:DiVA.org:uu-149929DiVA: diva2:406188
Available from: 2011-03-24 Created: 2011-03-24 Last updated: 2016-04-12Bibliographically approved

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Lu, Jun
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