Thin film plate acoustic resonators for integrated microwave power oscillator applications
2011 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 47, no 7, 452-453 p.Article in journal (Refereed) Published
Two-port film plate acoustic resonators (FPAR) devices operating on the lowest order symmetric Lamb wave mode (S0) in C-oriented AlN membranes on Si were fabricated and tested for their power handling capabilities in a feedback-loop power oscillator circuit. The FPAR was operated at an incident power level of 24 dBm for several weeks without performance degradation. Its flicker noise constant was calculated from close-in phase noise data as αR=2.1×10^−36/Hz. The results indicate that IC-compatible S0 FPARs are well suited for integrated microwave oscillators with thermal noise floor (TNF) levels below −175 dBc/Hz.
Place, publisher, year, edition, pages
2011. Vol. 47, no 7, 452-453 p.
Powe oscillator, low noise, MEMS, piezo
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Engineering Science with specialization in Microsystems Technology; Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-150468DOI: 10.1049/el.2011.0381ISI: 000288893100023OAI: oai:DiVA.org:uu-150468DiVA: diva2:407538
ProjectsVR "Thin Film Guided Microacoustic Waves in Periodical Systems: Theory and Applications"
FunderSwedish Research Council, 2009-5056