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Solidly mounted thin film electro-acoustic resonator utilizing a conductive Bragg reflector
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2008 (English)In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 141, no 2, 598-602 p.Article in journal (Refereed) Published
Abstract [en]

A new design of a solidly mounted resonator (SMR) that utilizes an all-metal Bragg reflector eliminating thus the need for a bottom electrode is proposed. In this configuration, the role of the bottom electrode is taken by the Bragg reflector rendering the resonator “combined electrode-Bragg reflector SMR”. The main advantages of the proposed design are the substantially reduced electrode resistance (and hence higher Q), the utilization of the full piezoelectric coupling at high frequencies as well as expected improvement in power handling capabilities due to lower dissipation and improved heat conductivity. Resonators with the classical and the new design have been fabricated and evaluated. The measurements indicate that indeed the resonators with the new design demonstrate improved performance.

Place, publisher, year, edition, pages
2008. Vol. 141, no 2, 598-602 p.
Keyword [en]
Micromachined acoustic resonator, AlN, Bragg reflector, Equivalent circuit
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-13019DOI: 10.1016/j.sna.2007.09.002ISI: 000253734900048OAI: oai:DiVA.org:uu-13019DiVA: diva2:40789
Projects
WISENETICTEA (SSF)
Available from: 2008-01-21 Created: 2008-01-21 Last updated: 2017-12-11Bibliographically approved
In thesis
1. Fabrication of Electroacoustic Devices for Integrated Applications
Open this publication in new window or tab >>Fabrication of Electroacoustic Devices for Integrated Applications
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Electroacoustic technology has in many ways revolutionised the wireless telecommunication industry. The IC compatible fabrication technique of thin film electroacoustic devices has so far provided a considerable increase in device performance and reduction in size. At the moment, new areas where this technology can be of use is under investigation. In particular, thin film bulk acoustic wave resonators are promising candidates for biochemical and gravimetric sensor applications.

For bulk acoustic waves, the thesis addresses a number of aspects in the design, fabrication, characterisation, and integration of thin film electroacoustic devices. The object of the studies conducted in the thesis has been to improve on design and thereby optimise the performance of the device to fit a particular application of interest. For high frequency and high power applications, a conceptually new design of the solidly mounted resonator has been investigated. A 1 GHz plate wave resonator with a much higher Q factor than its surface acoustic counterpart have also been fabricated. A multi-chip-module 2 GHz microwave oscillator featuring a monolithically integrated solidly mounted resonator and a flip chip transistor have been fabricated and characterised with a phase noise of -125 dBc/Hz at 100 kHz. For sensor applications, the fabrication of shear mode solidly mounted resonators featuring c-axis inclined AlN films has been studied. A process for the bonding of a microfluidic system on top of the resonator has been realised. Further, the effect of conductive liquids on the resonator performance has been investigated.For surface acoustic wave devices, acoustic manipulation of particles in microfluidic channels has been studied. Two functional devices have been fabricated by bonding piezoelectric substrates to glass or fused silica superstrates. By generating an interface acoustic wave, that propagates along the bonded interface, manipulation of sub-micrometer particles was realised.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2009. 70 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 631
National Category
Other Engineering and Technologies
Research subject
Electronics
Identifiers
urn:nbn:se:uu:diva-100381 (URN)978-91-554-7487-4 (ISBN)
Public defence
2009-05-15, Siegbahnsalen, Ångström laboratory, Uppsala, 09:30 (English)
Supervisors
Projects
wisenet
Available from: 2009-04-24 Created: 2009-03-31 Last updated: 2011-01-17Bibliographically approved
2. Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride
Open this publication in new window or tab >>Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. This has hastened the need for alternatives to ceramic resonators due to their limits in device size and performance, which in turn, has led to development of the thin film electro-acoustics industry with surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters now fabricated in their millions. Further, this new technology opens the way for integrating the traditionally incompatible integrated circuit (IC) and electro-acoustic (EA) technologies, bringing about substantial economic and performance benefits.

In this thesis the compatibility of aluminium nitride (AlN) to IC fabrication is explored as a means for furthering integration issues. Various issues have been explored where either tailoring thin film bulk acoustic resonator (FBAR) design, such as development of an improved solidly mounted resonator (SMR) technology, and use of IC technology, such as chemical mechanical polishing (CMP) or nickel silicide (NiSi), has made improvements beneficial for resonator fabrication or enabled IC integration. The former has resulted in major improvements to Quality factor, power handling and encapsulation respectively. The later has provided alternative methods to reduce electro- or acoustomigration, reduced device size, for plate waves, supplied novel low acoustic impedance material for high power applications and alternative electrodes for use in high temperature sensors.

Another method to enhance integration by using the piezoelectric material, AlN, in the IC side has also been explored. Here methods for analysing AlN film contamination and stoichiometry have been used for analysis of AlN as a high-k dielectric material. This has even brought benefits in knowledge of film composition for use as a passivation material with SiC substrates, investigated in high power high frequency applications. Lastly AlN has been used as a buried insulator material for new silicon-on-insulator substrates (SOI) for increased heat conduction. These new substrates have been analysed with further development for improved performance indicated.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2009. 77 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 643
Keyword
AlN, FBAR, FPAR, CMP, SOI, Nickel Silicide, Wafer Bonding
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electronics
Identifiers
urn:nbn:se:uu:diva-100957 (URN)978-91-554-7522-2 (ISBN)
Public defence
2009-05-22, Siegbahnsalen, The Ångström Laboratory, Lägerhyddsvägen 1, Uppsala, 09:30 (English)
Opponent
Supervisors
Projects
wisenet
Available from: 2009-04-29 Created: 2009-04-14 Last updated: 2011-01-17Bibliographically approved

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