Structural imaging of a Si quantum dot: Towards combined PL and TEM characterization
2006 (English)In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 121, no 2, 353-355 p.Article in journal (Refereed) Published
Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.
Place, publisher, year, edition, pages
2006. Vol. 121, no 2, 353-355 p.
silicon nanocrystal, luminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-151372DOI: 10.1016/j.jlumin.2006.08.061ISI: 000242751200039OAI: oai:DiVA.org:uu-151372DiVA: diva2:409671