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Precursor-dependent structural and electrical characteristics of atomic layer deposited films: Case study on titanium oxide
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2006 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 9, no 6, 1084-1089 p.Article in journal (Refereed) Published
Abstract [en]

Thin (10-20 nm) TiO2 films were atomic layer deposited from TiCl4, Ti(OC2H5)(4), H2O and H2O2 in the substrate temperature range 125-350 degrees C. The structure, chemical composition and electrical properties were correlated to the process temperature and nature of precursors, whereas the effect of precursors on conduction mechanisms was considerable only in the films grown at 125 degrees C, otherwise controlled by oxide-electrode interfaces. The use of chloride resulted in films with highest permittivity while the use of hydrogen peroxide resulted in lowest permittivity but also in lowest leakage. The post-deposition (pre-metallization) annealing resulted in densification and (re)crystallization of TiO2 layer but also in thickening of low-permittivity interface layers.

Place, publisher, year, edition, pages
2006. Vol. 9, no 6, 1084-1089 p.
Keyword [en]
titanium dioxide, atomic layer deposition, dielectric properties, metal-insulator-semiconductor structures, metal-insulator-metal structures
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-151454DOI: 10.1016/j.mssp.2006.10.027ISI: 000244261600042OAI: oai:DiVA.org:uu-151454DiVA: diva2:409967
Available from: 2011-04-12 Created: 2011-04-12 Last updated: 2016-07-11Bibliographically approved

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