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High boron incorporation in selective epitaxial growth of SiGe layers
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microstructure Laboratory.
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2007 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 18, no 7, 747-751 p.Article in journal (Refereed) Published
Abstract [en]

Incorporation of high amount of boron in the range of 1 x 10(20)-1 x 10(21) cm(-3) in selective epitaxial growth (SEG) of Si1-xGex (x = 0.15-0.315) layers for recessed or elevated source/drain junctions in CMOS has been studied. The effect of high boron doping on growth rate, Ge content and appearance of defect in the epi-layers was investigated. In this study, integration issues were oriented towards having high layer quality whereas still high amount of boron is implemented and the selectivity of the epitaxy is preserved.

Place, publisher, year, edition, pages
2007. Vol. 18, no 7, 747-751 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-151446DOI: 10.1007/s10854-007-9121-zISI: 000246175200013OAI: oai:DiVA.org:uu-151446DiVA: diva2:409981
Available from: 2011-04-12 Created: 2011-04-12 Last updated: 2017-12-11Bibliographically approved

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