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Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2007 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 84, no 9-10, 2010-2013 p.Article in journal (Refereed) Published
Abstract [en]

Conformal ZrO2 and HfO2 thin films were grown by atomic layer deposition using novel liquid cyclopentadienyl precursors at 300 degrees C or 350 degrees C on planar Si wafers and deep trenched Si with an aspect ratio of 60:1. The crystal growth and phase content in as-deposited films depended on the precursor, film thickness, and the material grown. The structural and electrical behaviour of the films were somewhat precursor-dependent, revealing better insulating properties in the films grown from oxygen-containing precursors. Also the HfO2 films showed lower leakage compared to ZrO2.

Place, publisher, year, edition, pages
2007. Vol. 84, no 9-10, 2010-2013 p.
Keyword [en]
atomic layer deposition, zirconium oxide, hafnium oxide, dielectrics
National Category
Engineering and Technology
URN: urn:nbn:se:uu:diva-151497DOI: 10.1016/j.mee.2007.04.035ISI: 000247378600040OAI: oai:DiVA.org:uu-151497DiVA: diva2:410226
Available from: 2011-04-13 Created: 2011-04-12 Last updated: 2016-04-11Bibliographically approved

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Lu, Jun
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