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The influence of metastabilities on the luminescence in the Cu(In,Ga)Se2 solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2007 (English)In: Acta Physica Polonica. A, ISSN 0587-4246, E-ISSN 1898-794X, Vol. 112, no 2, 183-189 p.Article in journal (Refereed) Published
Abstract [en]

Photoluminescence and electroluminescence spectra of the absorber layer in ZnO/CdS/Cu(In,Ga)Se-2 solar cells were measured. Their dependence on temperature, excitation intensity and applied voltage were studied. Electroluminescence measurements were used to investigate light- and bias-induced metastabilities in the absorber of the cells. We showed that metastable changes of defect distributions, which produce an effect on the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se2 material, affect also the luminescence yield. The dependence of the intensity and shape of the electroluminescence spectra on the state of the sample is observed. These results fit well into the theoretical calculations of Lany and Zunger model showing that divacancy complex (V-Sc-V-Cu) is responsible for metastable changes observed in ZnO/CdS/Cu (In, Ga) Se-2-based solar cells. We conclude that during light soaking or/and forward bias the probability of nonradiative recombination is decreased.

Place, publisher, year, edition, pages
2007. Vol. 112, no 2, 183-189 p.
National Category
Physical Sciences Engineering and Technology
URN: urn:nbn:se:uu:diva-151548ISI: 000250180300009OAI: oai:DiVA.org:uu-151548DiVA: diva2:410357
Available from: 2011-04-13 Created: 2011-04-13 Last updated: 2016-04-07Bibliographically approved

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