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Heavy Ion beam-based nano-and micro-structuring of TiO2 single crystals using self-assembled masks
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
2007 (English)In: Radiation Effects in Insulators. Proceedings of the Fourteenth International Conference on Radiation Effects in Insulators / [ed] Abdenacer Benyagoub, Lionel Thomé, Marcel Toulemonde and Patrick Trocellier, Elsevier, 2007, 3113-3119 p.Conference paper, Published paper (Refereed)
Abstract [en]

Fast heavy ion beam-based lithography using masks of self-assembled materials has been applied for transferring well-ordered nano- and micropatterns to rutile TiO2 single crystals. As the induced damage has a high etching selectivity the patterns can be developed in hydrofluoric acid with very high-contrast. Here we present resulting patterns when using a mask of self-ordered silica spheres. The obtained pattern are replicas of the mass distribution of the mask. In addition the shape and size of the regular structures depend on the applied ion energy and fluence. Direct modifications of the optical properties of TiO2 in a well-defined pattern are also presented.

Place, publisher, year, edition, pages
Elsevier, 2007. 3113-3119 p.
Series
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X ; 266: 12-13
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-13532DOI: 10.1016/j.nimb.2008.03.220OAI: oai:DiVA.org:uu-13532DiVA: diva2:41302
Conference
Fourteenth International Conference on Radiation Effects in Insulators, Caen, France, 28 August–1 September 2007
Available from: 2008-01-23 Created: 2008-01-23 Last updated: 2016-04-08Bibliographically approved

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Jensen, JensHjort, Klas

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