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Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates
Ecole Polytechnique Fe´de´rale de Lausanne (EPFL), Institute of Theoretical Physics, CH-1015 Lausanne, Switzerland.
Ecole Polytechnique Fe´de´rale de Lausanne (EPFL), Institute of Theoretical Physics, CH-1015 Lausanne, Switzerland.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
Ecole Polytechnique Fe´de´rale de Lausanne (EPFL), Institute of Theoretical Physics, CH-1015 Lausanne, Switzerland.
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2007 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 7, no 5, 1282-1285 p.Article in journal (Refereed) Published
Abstract [en]

A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing. © 2007 American Chemical Society.

Place, publisher, year, edition, pages
2007. Vol. 7, no 5, 1282-1285 p.
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Natural Sciences Engineering and Technology
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URN: urn:nbn:se:uu:diva-13608DOI: 10.1021/nl0702012OAI: oai:DiVA.org:uu-13608DiVA: diva2:41378
Available from: 2008-01-23 Created: 2008-01-23 Last updated: 2017-12-11Bibliographically approved

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Leifer, Klaus

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