uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Narrow (= 4 meV) inhomogeneous broadening and its correlation with confinement potential of pyramidal quantum dot arrays
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Experimental Physics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Show others and affiliations
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 8, 081106-081106-3 p.Article in journal (Refereed) Published
Abstract [en]

The inhomogeneous broadening in the luminescence spectra of ordered arrays of pyramidal GaAsAlGaAs semiconductor quantum dots (QDs) was studied as a function of the dot size. Dot arrays with inhomogeneous broadening as small as 4.1 meV and a corresponding ground state to first excited state transition separation of 28 meV were obtained. By evaluating the QD energy levels using a multiband kp model, the authors estimated that the observed inhomogeneous broadening corresponds to dot height fluctuations of about 1-2 ML across the array.

Place, publisher, year, edition, pages
2007. Vol. 91, no 8, 081106-081106-3 p.
Keyword [en]
aluminium compounds, gallium compounds, III-V semiconductors, k.p calculations, photoluminescence, semiconductor quantum dots
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-13630DOI: 10.1063/1.2772178ISI: 000248984800006OAI: oai:DiVA.org:uu-13630DiVA: diva2:41400
Available from: 2008-01-24 Created: 2008-01-24 Last updated: 2016-04-07Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Leifer, Klaus

Search in DiVA

By author/editor
Leifer, Klaus
By organisation
Experimental PhysicsApplied Materials Sciences
In the same journal
Applied Physics Letters
Physical SciencesEngineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 766 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf