Narrow (= 4 meV) inhomogeneous broadening and its correlation with confinement potential of pyramidal quantum dot arrays
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 8, 081106-081106-3 p.Article in journal (Refereed) Published
The inhomogeneous broadening in the luminescence spectra of ordered arrays of pyramidal GaAsAlGaAs semiconductor quantum dots (QDs) was studied as a function of the dot size. Dot arrays with inhomogeneous broadening as small as 4.1 meV and a corresponding ground state to first excited state transition separation of 28 meV were obtained. By evaluating the QD energy levels using a multiband kp model, the authors estimated that the observed inhomogeneous broadening corresponds to dot height fluctuations of about 1-2 ML across the array.
Place, publisher, year, edition, pages
2007. Vol. 91, no 8, 081106-081106-3 p.
aluminium compounds, gallium compounds, III-V semiconductors, k.p calculations, photoluminescence, semiconductor quantum dots
Physical Sciences Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-13630DOI: 10.1063/1.2772178ISI: 000248984800006OAI: oai:DiVA.org:uu-13630DiVA: diva2:41400