On Gate Capacitance of Nanotube Networks
2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 5, 641-643 p.Article in journal (Refereed) Published
This letter presents a systematic investigation of the gate capacitance C-G of thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, C-G is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of C-G is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.
Place, publisher, year, edition, pages
2011. Vol. 32, no 5, 641-643 p.
Frequency dependence, gate capacitance, nanotube networks, percolation, transmission line model
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-153581DOI: 10.1109/LED.2011.2118733ISI: 000289908500021OAI: oai:DiVA.org:uu-153581DiVA: diva2:417154