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Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
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2011 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 605, no 9-10, 883-888 p.Article in journal (Refereed) Published
Abstract [en]

Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.

Place, publisher, year, edition, pages
2011. Vol. 605, no 9-10, 883-888 p.
Keyword [en]
Ab initio calculations, Scanning-tunneling microscopy, Synchrotron radiation photoelectron spectroscopy, Surface reconstruction, Gallium-arsenide (GaAs), Indium-arsenide (InAs), Single crystal surfaces
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Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-153551DOI: 10.1016/j.susc.2011.01.034ISI: 000290050600008OAI: oai:DiVA.org:uu-153551DiVA: diva2:417252
Available from: 2011-05-16 Created: 2011-05-16 Last updated: 2017-12-11Bibliographically approved

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Johansson, BörjeVitos, Levente

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