Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy
2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 109, no 8, 083546- p.Article in journal (Refereed) Published
Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga0.995Mn0.005As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals.
Place, publisher, year, edition, pages
2011. Vol. 109, no 8, 083546- p.
Engineering and Technology
Research subject Engineering Science with specialization in Solid State Physics
IdentifiersURN: urn:nbn:se:uu:diva-153956DOI: 10.1063/1.3581108ISI: 000290047000070OAI: oai:DiVA.org:uu-153956DiVA: diva2:418634