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Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films Group)
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2011 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 14, no 7, H268-H270 p.Article in journal (Refereed) Published
Abstract [en]

This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 mu Omega cm.

Place, publisher, year, edition, pages
2011. Vol. 14, no 7, H268-H270 p.
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-154110DOI: 10.1149/1.3580618ISI: 000290276400013OAI: oai:DiVA.org:uu-154110DiVA: diva2:419382
Available from: 2011-05-26 Created: 2011-05-26 Last updated: 2017-12-11Bibliographically approved

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Gao, XindongAndersson, JoakimKubart, TomasNyberg, TomasSmith, UlfZhang, Shi-Li

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