On the transition between space-charge-free and space-charge-limited conduction in diamond
2011 (English)In: Solid State Sciences, ISSN 1293-2558, E-ISSN 1873-3085, Vol. 13, no 5, 1065-1067 p.Article in journal (Refereed) Published
Carrier transport in a high-purity single-crystalline CVD diamond sample was studied using the Time-of-Flight technique with optical UV excitation. By varying the intensity of the optical excitation over four orders of magnitude, the transition between space-charge-free and space-charge-limited hole conduction in diamond is directly observed. Experimentally, we find that even a relatively small injected charge appreciably affects the drift velocity measurements. To achieve a relative error in drift velocity less than 1%, the injected charge has to be less than 0.01 CU, where C is the sample capacitance and U the applied bias.
Place, publisher, year, edition, pages
2011. Vol. 13, no 5, 1065-1067 p.
Time-of-Flight, CVD diamond, Charge carrier transport, Space-charge-free transport, Space-charge-limited transport
Engineering and Technology
Research subject Engineering Science with specialization in Science of Electricity
IdentifiersURN: urn:nbn:se:uu:diva-154882DOI: 10.1016/j.solidstatesciences.2011.01.018ISI: 000291081900040OAI: oai:DiVA.org:uu-154882DiVA: diva2:422653