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TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime
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2011 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 605, no 13-14, 1147-1156 p.Article in journal (Refereed) Published
Abstract [en]

The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process.

Place, publisher, year, edition, pages
2011. Vol. 605, no 13-14, 1147-1156 p.
Keyword [en]
Chemical vapor deposition, Synchrotron radiation photoelectron spectroscopy, X-ray absorption spectroscopy, Scanning tunneling microscopy, Growth, Titanium dioxide, Low index single crystal surfaces, Crystalline-amorphous interfaces
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Natural Sciences
Identifiers
URN: urn:nbn:se:uu:diva-156076DOI: 10.1016/j.susc.2011.03.001ISI: 000291905400005OAI: oai:DiVA.org:uu-156076DiVA: diva2:430716
Available from: 2011-07-12 Created: 2011-07-11 Last updated: 2017-12-11

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Sandell, A.

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