Mobility Extraction for Nanotube TFTs
2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 7, 913-915 p.Article in journal (Refereed) Published
An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.
Place, publisher, year, edition, pages
2011. Vol. 32, no 7, 913-915 p.
Carbon nanotube network, carrier mobility, current exponent, gate capacitance, hysteresis
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-156247DOI: 10.1109/LED.2011.2149494ISI: 000292165200027OAI: oai:DiVA.org:uu-156247DiVA: diva2:431387