Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications
2011 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 86, no 1, 23-26 p.Article in journal (Refereed) Published
Piezoelectric c-textured Al(1-x)ScxN thin films, where the Sc relative concentration, x, varies in the range 0-0.15 have been studied in view of radio frequency (RF) electro-acoustic applications. Thin film bulk acoustic wave resonators (FBARs) employing these films were fabricated and characterized as a function of the Sc concentration for the first time. The measured electromechanical coupling is found to increase by as much as 100% in the above concentration range. The results from this work underline the potential of the c-textured Al(1-x)ScxN based FBARs for wide band RF applications.
Place, publisher, year, edition, pages
2011. Vol. 86, no 1, 23-26 p.
Thin film devices, Composite thin films, Acoustic microwave devices
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-156876DOI: 10.1016/j.vacuum.2011.03.026ISI: 000295312300005OAI: oai:DiVA.org:uu-156876DiVA: diva2:433653