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Deposition of magnesium hydride thin films using radio frequency reactive sputtering
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Institute for Energy Technology, Kjeller, Norge.
Institute for Energy Technology, Kjeller, Norge.
Delft University of Technology.
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2011 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, no 18, 5949-5954 p.Article in journal (Refereed) Published
Abstract [en]

Reactive sputter deposition of MgHx thin films was performed using mixed hydrogen–argon plasma. This technique allows in-situ deposition of metal hydride films in contrast to the commonly applied ex-situ hydrogenation of metallic films. Partly transparent films were obtained and the formation of crystalline MgH2 could be observed for thicknesses above about 200 nm. The formation of some metallic Mg in the films could not be avoided. Increased hydrogen loading by increased pressure, H2:Ar ratio or reduced power produced films of porous structure that easily oxidise. More densely packed films remain stable for several months of air exposure. Post-deposition treatments in H-plasma showed evidence of hydrogenation of deposited films without the use of a catalysing capping film. Film properties are studied by X-ray diffraction, scanning electron microscopy and by optical and resistivity measurements.

Place, publisher, year, edition, pages
2011. Vol. 519, no 18, 5949-5954 p.
National Category
Materials Engineering
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-157235DOI: 10.1016/j.tsf.2011.03.033ISI: 000292576500018OAI: oai:DiVA.org:uu-157235DiVA: diva2:435921
Available from: 2011-08-22 Created: 2011-08-22 Last updated: 2015-08-13Bibliographically approved

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Platzer-Björkman, Charlotte
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