Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1−xMgxO buffer layers
2011 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, no 21, 7476-7480 p.Article in journal (Refereed) Published
A baseline parameter set for electrical modelling of Cu(In,Ga)Se2 solar cells with compositionally graded absorber and CdS buffer layer is established. The cases with and without Fermi level pinning as well as withand without a surface defect layer are considered. Simulations with a defect layer are observed to give the best correspondence to measurements. Zn1−xMgxO buffer layers are introduced and initial modelling of the lightsoaking behaviour is performed. Simulation results are compared with experimental data.
Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 519, no 21, 7476-7480 p.
Electrical modelling, CIGS solar cells, Buffer layers, Graded absorber, Light-soaking, Metastabilities
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-157808DOI: 10.1016/j.tsf.2010.12.141ISI: 000295347700082OAI: oai:DiVA.org:uu-157808DiVA: diva2:436314