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Sensitivity Features of Thin Film Plate Acoustic Wave Resonators
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin films)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. (Thin Films)
2011 (English)In: IEEE Sensors Journal, ISSN 1530-437X, E-ISSN 1558-1748, Vol. 11, no 12, 3330-3331 p.Article in journal (Refereed) Published
Abstract [en]

Thin film plate acoustic resonators devices operating in the lowest order symmetric Lamb wave mode (S0) in coriented aluminum nitride (AlN) membranes on Si were fabricated and tested for their sensitivities to pressure and mass as well as for their ability to work in liquid environment.

Place, publisher, year, edition, pages
IEEE Sensors Council , 2011. Vol. 11, no 12, 3330-3331 p.
Keyword [en]
Film bulk acoustic resonators, Resonant frequency, Sensitivity, Sensors, Surface acoustic waves
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Microsystems Technology; Engineering Science with specialization in Electronics
Identifiers
URN: urn:nbn:se:uu:diva-157877DOI: 10.1109/JSEN.2011.2158094ISI: 000301878500019OAI: oai:DiVA.org:uu-157877DiVA: diva2:436776
Projects
VR "Thin Film Guided Microacoustic Waves in Periodical Systems: Theory and Applications"
Funder
Swedish Research Council, 2009-5056
Available from: 2011-08-24 Created: 2011-08-24 Last updated: 2017-12-08Bibliographically approved
In thesis
1. Advanced MEMS Pressure Sensors Operating in Fluids
Open this publication in new window or tab >>Advanced MEMS Pressure Sensors Operating in Fluids
2012 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Today’s MEMS technology allows manufacturing of miniaturized, low power sensors that sometimes exceeds the performance of conventional sensors. The pressure sensor market today is dominated by MEMS pressure sensors.

In this thesis two different pressure sensor techniques are studied. The first concerns ways to improve the sensitivity in the most commonly occurring pressure sensor, namely such based on the piezoresistive technique. Since the giant piezoresistive effect was observed in silicon nanowires, it was assumed that a similar effect could be expected in nano-thin silicon films. However, it turned out that the conductivity was extremely sensitive to substrate bias and could therefore be controlled by varying the backside potential. Another important parameter was the resistivity time drift. Long time measurements showed a drastic variation in the resistance. Not even after several hours of measurement was steady state reached. The drift is explained by hole injection into the buried oxide as well as existence of mobile charges. The piezoresistive effect was studied and shown to be of the same magnitude as in bulk silicon. Later research has shown the existence of such an effect where the film thickness has to be less than around 20 nm. 

The second area that has been studied is the pressure sensitivity of in acoustic resonators. Aluminium nitride thin film plate acoustic resonators (FPAR) operating at the lowest-order symmetric (S0), the first-order asymmetric (A1) as well as the first-order symmetric (S1) Lamb modes have been theoretically and experimentally studied in a comparative manner. The S0 Lamb mode is identified as the most pressure sensitive FPAR mode. The theoretical predictions were found to be in good agreement with the experiments. Additionally, the Lamb modes have been tested for their sensitivities to mass loading and their ability to operate in liquids, where the S0 mode showed good results.

Finally, the pressure sensitivity in aluminium nitride thin film bulk wave resonators employing c- and tilted c-axis texture has been studied. The c-axis tilted FBAR demonstrates a substantially higher pressure sensitivity compared to its c-axis oriented counterpart. 

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2012. 54 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 933
Keyword
pressure sensor, piezoresistance, nanofilms, AlN, microacoustic, Lamb wave, thin film, resonator, sensitivity
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics
Identifiers
urn:nbn:se:uu:diva-173182 (URN)978-91-554-8369-2 (ISBN)
Public defence
2012-06-05, Polhelmsalen, Ångströmslaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:00 (English)
Opponent
Supervisors
Available from: 2012-05-15 Created: 2012-04-20 Last updated: 2012-08-01Bibliographically approved
2. Thin Film Plate Acoustic Resonators for Frequency Control and Sensing Applications
Open this publication in new window or tab >>Thin Film Plate Acoustic Resonators for Frequency Control and Sensing Applications
2012 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The recent development of the commercially viable thin film electro-acoustic technology has triggered a growing interest in the research of plate guided wave or Lamb wave components owing to their unique characteristics. In the present thesis i) an experimental study of the thin film plate resonators (FPAR) performance operating on the lowest symmetrical Lamb wave (S0) propagating in highly textured AlN membranes versus a variety of design parameters has been performed. The S0 mode is excited through an Interdigital Transducer and confined within the structure by means of reflection from metal strip gratings. Devices operating in the vicinity of the stop-band center exhibiting a Q-value of up to 3000 at a frequency around 900MHz have been demonstrated. Temperature compensation of this type of devices has been studied theoretically and successfully realized experimentally for the first time. Further, integrated circuit-compatible S0 Lamb based two-port FPAR stabilized oscillators exhibiting phase noise of -92 dBc/Hz at 1 kHz frequency offset with feasible thermal noise floor below -180 dBc/Hz have been tested under high power for a couple of weeks. More specifically, the FPARs under test have been running without any performance degradation at up to 27 dBm loop power. Further, the S0 mode was experimentally demonstrated to be highly mass and pressure sensitive as well as suitable for in-liquid operation, which together with low phase noise and high Q makes it very suitable for sensor applications; ii) research in view of FPARs operating on other types of Lamb waves as well as novel operation principles has been initiated. In this work, first results on the design, fabrication and characterization of two novel type resonators: The Zero Group Velocity Resonators (ZGVR) and The Intermode-Coupled Thin Film Plate Acoustic Resonators (IC-FPAR), exploiting new principles of operation have been successfully demonstrated. The former exploits the intrinsic zero group velocity feature of the S1 Lamb mode for certain combination of design parameters while the latter takes advantage of the intermode interaction (involving scattering) between S0 and A1 Lamb modes through specially designed metal strip gratings (couplers). Thus both type of resonators operate on principles of confining energy under IDT other than reflection.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2012. 80 p.
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 959
Keyword
Electro-Acoustics, FPAR, Lamb waves, aluminium nitride, interdigital transducer, phase noise, temperature compensation, power handling, sensitivity, zero group velocity, intermode coupling
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics; Engineering Science with specialization in Microsystems Technology
Identifiers
urn:nbn:se:uu:diva-178592 (URN)978-91-554-8437-8 (ISBN)
Public defence
2012-09-28, Polhemsalen, Ångströmlaboratoriet, Läggerhyddsvägen 1, Uppsala, 09:15 (English)
Opponent
Supervisors
Available from: 2012-09-06 Created: 2012-08-01 Last updated: 2013-01-22Bibliographically approved

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Arapan, LiliaAnderås, EmilKatardjiev, IliaYantchev, Ventsislav

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