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Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
State Key Lab of ASIC & Systems, School of Microelectronics, Fudan University, Shanghai, China.
Dept of Physics, Chemistry and Biology, Linköping University.
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2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 8, 1029-1031 p.Article in journal (Refereed) Published
Abstract [en]

The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.

Place, publisher, year, edition, pages
2011. Vol. 32, no 8, 1029-1031 p.
Keyword [en]
Dopant segregation (DS), epitaxy, morphological stability, NiSi(2), Schottky barrier height (SBH), ultrathin
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-158177DOI: 10.1109/LED.2011.2157301ISI: 000293710400012OAI: oai:DiVA.org:uu-158177DiVA: diva2:438314
Available from: 2011-09-02 Created: 2011-09-01 Last updated: 2016-04-20Bibliographically approved

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Gao, XindongZhang, Shi-Li
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