Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)
2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 8, 1029-1031 p.Article in journal (Refereed) Published
The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.
Place, publisher, year, edition, pages
2011. Vol. 32, no 8, 1029-1031 p.
Dopant segregation (DS), epitaxy, morphological stability, NiSi(2), Schottky barrier height (SBH), ultrathin
Engineering and Technology
Research subject Engineering Science with specialization in Electronics
IdentifiersURN: urn:nbn:se:uu:diva-158177DOI: 10.1109/LED.2011.2157301ISI: 000293710400012OAI: oai:DiVA.org:uu-158177DiVA: diva2:438314