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Sub-bandgap photoconductivity and photocapacitance in CIGS thin films and devices
Faculty of Physics, Warsaw University of Technology, Warszawa, Polen.
Faculty of Physics, Warsaw University of Technology, Warszawa, Polen.
Faculty of Physics, Warsaw University of Technology, Warszawa, Polen.
Device Development center, TDK Corporation, Chiba, Japan, and, Laboratory of Photovoltaic, University of Luxembourg, Belvaux, Luxembourg.
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2011 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, no 21, 7489-7492 p.Article in journal (Refereed) Published
Abstract [en]

Photoconductivity and photocapacitance of Cu(In,Ga)Se(2) and CuGaSe(2) thin films and devices induced by sub-bandgap illumination are investigated. Both effects have been attributed to the optical transition from valence band to the same empty levels situated around 0.8-0.9 eV above the valence band. The influence of the metastable states created by illumination and voltage bias on the sub-bandgap response has been studied. The experimental results are discussed in the framework of a model based on negative-U property of a native defect in chalcopyrites, i.e. V(Se)-V(Cu) divacancy. The arguments are presented that the levels involved in the optical transition observed in photoconductivity and photocapacitance might be antibonding levels of the acceptor configuration of this defect.

Place, publisher, year, edition, pages
2011. Vol. 519, no 21, 7489-7492 p.
Keyword [en]
CIGS, Photoconductivity, Photocapacitance, Defect levels
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Electronics
URN: urn:nbn:se:uu:diva-160509DOI: 10.1016/j.tsf.2011.01.179ISI: 000295347700085OAI: oai:DiVA.org:uu-160509DiVA: diva2:451398
Available from: 2011-10-25 Created: 2011-10-25 Last updated: 2016-04-20Bibliographically approved

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Edoff, Marika
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